60612 tkim/d0209pa tkim tc-00002143 no. a1624-1/9 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 SFT1431 n-channel power mosfet 35v, 11a, 25m , single tp/tp-fa stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. ordering number : ena1624a features ? motor drive application ? low on-resistance ? 4v drive ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 35 v gate-to-source voltage v gss 20 v drain current (dc) i d 11 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% 44 a allowable power dissipation p d 1.0 w tc=25 c15w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-004 7003-004 tl product & package information ? package : tp ? package : tp-fa ? jeita, jedec : sc-64, to-251 ? jeita, jedec : sc-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : gate 2 : drain 3 : source 4 : drain tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : gate 2 : drain 3 : source 4 : drain tp-fa SFT1431-h SFT1431-tl-e 1 3 2,4 t1431 lot no.
SFT1431 no. a1624-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 35 v zero-gate voltage drain current i dss v ds = 35 v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d = 5.5 a 5s static drain-to-source on-state resistance r ds (on)1 i d = 5.5 a, v gs =10v 19 25 m r ds (on)2 i d =3a, v gs =4.5v 28 39.5 m r ds (on)3 i d =3a, v gs =4v 35 49 m input capacitance ciss v ds =20v, f=1mhz 960 pf output capacitance coss 130 pf reverse transfer capacitance crss 84 pf turn-on delay time t d (on) see speci ed test circuit. 12 ns rise time t r 40 ns turn-off delay time t d (off) 60 ns fall time t f 36 ns total gate charge qg v ds =20v, v gs =10v, i d =11a 17.3 nc gate-to-source charge qgs 3.2 nc gate-to-drain ?miller? charge qgd 3.6 nc diode forward voltage v sd i s =11a, v gs =0v 0.88 1.2 v switching time test circuit ordering information device package shipping memo SFT1431-h tp 500pcs./bag pb free SFT1431-tl-e tp-fa 700pcs./reel pw=10 s d.c. 1% p. g 50 g s d i d =5.5a r l =2.7 v dd =15v v out v in 10v 0v v in SFT1431
SFT1431 no. a1624-3/9 i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a --25 c tc=75 c 0 2 8 6 4 10 20 18 16 14 12 0 it15240 0.5 1.5 2.0 1.0 2.5 4.0 3.5 3.0 0 v ds =10v single pulse 25 c it15239 0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.9 0.8 1.0 0 11 9 7 5 3 2 10 8 6 4 1 v gs =3.0v 16.0v 10.0v 4.5v 8.0v 4.0v 3.5v 6.0v tc=25 c single pulse | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds i s -- v sd 100 1000 3 2 3 7 5 7 5 2 10 3 100 7 5 7 3 2 3 5 2 10 75 70 65 60 55 50 45 40 35 30 25 15 20 12468 16 14 12 10 3579 15 13 11 it15241 035 30 25 20 51015 it15246 it15244 it15243 1.2 1.0 0.4 0.2 0.8 0.6 0 0.001 0.1 5 7 3 2 3 2 2 10 5 7 3 2 1.0 5 7 3 0.01 2 5 7 3 3 1.0 3 2 7 5 7 5 10 2 1.0 0.1 23 57 23 23 10 57 tc= --25 c 75 c 25 c v ds =10v tc=75 c 25 c --25 c f=1mhz coss ciss crss it15245 0.1 23 23 57 1.0 23 57 10 t d (off) t f t d (on) t r v dd =15v v gs =10v 3 i d =5.5a 3a it15242 --50 --25 150 0 25 50 75 100 125 0 55 5 40 30 10 15 45 25 20 35 50 v gs =4.5v, i d =3.0a v gs =10.0v, i d =5.5a v gs =4.0, i d =3.0a single pulse tc=25 c single pulse v gs =0v single pulse
SFT1431 no. a1624-4/9 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a it15248 it15247 0246 12 10 16 14 818 0 2 1 4 6 8 3 5 7 9 10 0.1 1.0 2 3 5 7 2 3 5 7 2 3 5 7 10 0.1 i dp =44a i d =11a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). 1.0 23 57 2 10 357 23 7 5 100 v ds =20v i d =11a pw 10 s tc=25 c single pulse ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 20 40 60 80 100 120 140 160 it15249 0.2 0.4 1.0 1.2 0.8 0.6 p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it15250 20 15 10 5 0 0 20 40 60 80 100 120 140 160
SFT1431 no. a1624-5/9 taping speci cation SFT1431-tl-e
SFT1431 no. a1624-6/9 outline drawing land pattern example SFT1431-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
SFT1431 no. a1624-7/9 bag packing speci cation SFT1431-h
SFT1431 no. a1624-8/9 outline drawing SFT1431-h mass (g) unit 0.315 * for reference mm
SFT1431 ps no. a1624-9/9 note on usage : since the SFT1431 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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